The engineering world has been working on the development and evaluation of IBOC transmission for some time. The NRSC began evaluation proceedings of general DAB systems in 1995. After the proponents merged into one, Ibiquity was left in the running for potential adoption. In the fall of 2001,the NRSC issued a report on Ibiquity's FM IBOC. This comprehensive report runs 62 pages of engineering material plus 13 appendices. All of the system with its blend-to analog operation as signal levels changes. The application of the FM IBOC has been studied by the NRSC and appears to be understood and accepted by radio engineers.

AM IBOC has recently been studied by an NRSC working group as prelude to its adoption for general broadcast use .Its was presented during the NAB convention in April. The FM report covers eight areas of vital performance concerns to the broadcaster and listener alike .If all of these concerns can be met as successfully by AM IBOC, and the receiver manufactures rally to develop and produce the necessary receiving equipment. The evaluated FM concerns were audio quality, service area, acquisition performance, durability, auxiliary data capacity, and behavior as signal degrades, stereo separation and flexibility.

The FM report paid strong attention to the use of SCA services on FM IBOC. About half of all the operating FM stations employ one or more SCAs for reading for the blind or similar services. Before going to the description of FM IBOC system, it is important to discuss the basic principles of digital radio, and IBOC technology. In the foregoing sections we see the above- mentioned topics.

SPINTRONICS

Spintronics can be fairly new term for you but the concept isn't so very exotic .This technological discipline aim to exploit subtle and mind bending esoteric quantum property of electron to develop a new generation of electronics devices. The ability to exploit spin in semiconductor promise a new logical devices as spin transistor etc with enhanced functionality higher speed and reduction power conception and might have a spark revolution in semiconductor industry. so far the problem of injecting electron with controlled spin direction has held up the realization of such spintronics

Spintronics is an emergent technology that exploits the quantum propensity of the electrons to spin as well as making use of their charge state. The spin itself is manifested as a detectable weak magnetic energy state characterised as "spin up" or "spin down".

Conventional electronic devices rely on the transport of electrical charge carriers - electrons - in a semiconductor such as silicon. Device engineers and physicists are now trying to exploit the spin of the electron rather than its charge.

Spintronic-devices combine the advantages of magnetic materials and semiconductors. They are expected to be non-volatile, versatile, fast and capable of simultaneous data storage and processing, while at the same time consuming less energy. Spintronic-devices are playing an increasingly significant role in high-density data storage, microelectronics, sensors, quantum computing and bio-medical applications, etc.

FINFET TECHNOLOGY

Since the fabrication of MOSFET, the minimum channel length has been shrinking continuously. The motivation behind this decrease has been an increasing interest in high-speed devices and in very large-scale integrated circuits. The sustained scaling of conventional bulk device requires innovations to circumvent the barriers of fundamental physics constraining the conventional MOSFET device structure. The limits most often cited are control of the density and location of dopants providing high I on /I off ratio and finite sub threshold slope and quantum-mechanical tunneling of carriers through thin gate from drain to source and from drain to body.

The channel depletion width must scale with the channel length to contain the off-state leakage I off. This leads to high doping concentration, which degrade the carrier mobility and causes junction edge leakage due to tunneling. Furthermore, the dopant profile control, in terms of depth and steepness, becomes much more difficult. The gate oxide thickness tox must also scale with the channel length to maintain gate control, proper threshold voltage VT and performance. The thinning of the gate dielectric results in gate tunneling leakage, degrading the circuit performance, power and noise margin.